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在LiNbO3(LN)中掺入摩尔分数分别为0,0.25%,1.5%,1.75%的In2O3、质量分数为0.1%的Fe2O3和0.05%的CuO,用提拉法生长了系列In:Fe:Cu:LiNbO3(In:Fe:Cu:LN)晶体。采用Sénarmont补偿法和透射光束图像畸变法,测试In:Fe:Cu:LN晶体的光损伤阈值,基于Scalar表达式,讨论了晶体光损阈值变化的机理。结果表明:3%In:0.1%Fe:0.05%Cu:LN晶体光损伤阈值比LN晶体高2个数量级,3%In3+达到阈值浓度。采用0.1%Fe:0.05%Cu:LN晶体和0.5%In:0.1%Fe:0.05%Cu:LN晶体作为存储介质,Fe2+/Fe3+作为浅能级,Cu+/Cu2+作为深能级,以氪离子激光(蓝光)作开关光,氦-氖激光(红光)作为记录光,完成双光子固定非挥发性存储实验。实验表明:0.5%In:0.1%Fe:0.05%Cu:LN晶体存储记录速度比Mn:Fe:LN晶体提高1个数量级。
LiNbO3 (LN) was doped with 0,0.25%, 1.5%, 1.75% of In2O3, 0.1% of mass fraction of Fe2O3 and 0.05% of CuO, and the series of In: Fe: Cu : LiNbO3 (In: Fe: Cu: LN) crystals. The damage threshold of In: Fe: Cu: LN crystal was measured by the Sénarmont compensation method and the transmitted beam distortion method. Based on the Scalar expression, the mechanism of the threshold change of crystal damage was discussed. The results show that the optical damage threshold of 3% In: 0.1% Fe: 0.05% Cu: LN crystal is 2 orders of magnitude higher than that of LN and 3% of In3 + reaches the threshold concentration. As the storage medium, 0.1% Fe: 0.05% Cu: LN crystal and 0.5% In: 0.1% Fe: 0.05% Cu: LN crystal were used as storage medium, Fe2 + / Fe3 + (Blue light) as the switching light, helium-neon laser (red light) as the recording light to complete the two-photon fixed non-volatile storage experiment. Experiments show that the recording speed of 0.5% In: 0.1% Fe: 0.05% Cu: LN crystal is 1 order of magnitude higher than Mn: Fe: LN crystal.