二氧化铈绝缘体 随着超大规模集成电路的发展,要求使用一种与微型电容器相匹配的薄膜材料。在低压下运行时,微型电容器必须具有适当的介电特性。以前用SiO_2来绝缘,但是,SiO_2不能满足超大规模集成技术发展的基本要求。其他的高介电常数薄膜绝缘材料,如Ta_2O_5能够用于超大规模集成电路中,但是,Ta_2O_5多晶膜的制备问题还悬而未决。 Ceria Insulator With the development of very large scale integrated circuits, it is required to use a thin film material that matches with the miniature capacitor. Micro-capacitors must have suitable dielectric properties when operating at low voltage. However, SiO 2 can not meet the basic requirements of VLSI technology. Other high dielectric constant thin film insulating materials, such as Ta 2 O 5, can be used in very large scale integrated circuits. However, the preparation of Ta 2 O 5 polycrystalline film is still pending.