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制备了ITO/NPB/LiF/Alq3/LiF/Al的器件,测量了该组器件效率和亮度的磁效应.结果表明,在50mT磁场中,当LiF缓冲层厚度为0.8nm时,器件的效率最大增加了12.4%,磁致亮度最大变化率17%.同时,制备的磷光器件ITO/NPB/LiF/CBP:6wt%Ir(ppy)3/BCP/Alq3/LiF/Al,在50mT磁场作用下,当LiF缓冲层的厚度为0.8nm时,器件的效率最大增加12.1%.在Alq3的荧光器件中,由于发光材料在磁场的作用下产生了塞曼效应,超精细耦合作用减弱,单重态的极化子对向三重态的极化子对的转移受到了抑制,从而使单重态激子的数量增加,发光增强;与荧光器件类似,在Ir(ppy)3的磷光器件中,效率增加的原因是由于荧光主体材料CBP在磁场的作用下单重态激子数量增加,而间接的导致了磷光材料系间窜越现象的加剧所引起的.
The device of ITO / NPB / LiF / Alq3 / LiF / Al was fabricated and the magnetic effect of the device efficiency and brightness was measured.The results show that the device efficiency is the largest when the thickness of LiF buffer layer is 0.8nm in 50mT magnetic field (Ppy) 3 / BCP / Alq3 / LiF / Al was increased by 12.4% and the maximum change rate of magnetism brightness was 17% When the thickness of the LiF buffer layer is 0.8nm, the maximum efficiency of the device is increased by 12.1% .In the Alq3 fluorescent device, due to the Zeeman effect of the luminescent material under the action of the magnetic field, the hyperfine coupling effect is weakened, The transfer of polaron pairs in the polaron-to-triplet state is suppressed, resulting in an increase in the number of singlet excitons and an increase in luminescence; in the phosphorescent device of Ir (ppy) 3, similar to the fluorescent device, the efficiency is increased Is due to the fact that the number of singlet excitons in the fluorescent host material CBP increases due to the magnetic field, which indirectly leads to the exacerbation of the phenomenon of channeling between phosphorescent materials.