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采用离子束辅助中频反应磁控溅射技术在单晶硅及YG6硬质合金基体上沉积AlN薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度计、薄膜结合强度划痕试验仪等对薄膜结构及性能进行表征,着重研究了偏压对中频反应溅射沉积AlN薄膜结构和性能的影响。研究结果表明:所制备的AlN薄膜是由AlN相和Al相组成的,偏压的增大,有利于薄膜结晶度的提高,AlN沿(100)晶面择优取向增强;同时,随着偏压的增加,所沉积的AlN薄膜致密度和膜/基结合力均显著提高,而膜层沉积速率和膜基复合硬度则呈降低的规律。
AlN thin films were deposited on single-crystal silicon and YG6 cemented carbide substrates by ion beam-assisted MF reactive magnetron sputtering. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), microhardness tester Scratching tester and other films were characterized on the structure and performance, focusing on the bias voltage on reactive sputtering Sputtered AlN film structure and performance. The results show that the prepared AlN film is composed of AlN phase and Al phase. The increase of bias voltage is beneficial to the increase of the crystallinity of the film and the preferential orientation of AlN along the (100) plane. Meanwhile, with the bias voltage , The density and film / substrate bonding strength of AlN film deposited were significantly increased, while the film deposition rate and film-based composite hardness decreased.