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通过分析InGaP/GsAsHBT器件的热学和电学特点,结合HBT大功率放大器芯片在技术性能、稳定性、可靠性及尺寸等方面的要求,通过优化设计HBT功率器件单元和匹配电路,开发了一个大功率、高效率、小尺寸的ISM波段功率放大器单片集成电路。该三级放大器的各级器件单元的发射极面积分别为320μm2,1280μm2,5760μm2,芯片内部包括了输入、输出50Ω匹配电路,面积仅为1.9mm×2.1mm。放大器采用5V单电源供电,在2.4～2.5GHz频率范围内线性增益为27dB,2dB增益压缩点输出饱和功率达到37dBm,功率附加效率为46%。
By analyzing the thermal and electrical characteristics of InGaP / GsAsHBT devices and combining with the requirements of HBT high power amplifier chips in terms of technical performance, stability, reliability and size, a high-power HBT power device unit and matching circuit are optimized. , High efficiency, small size ISM band power amplifier monolithic integrated circuits. The three-stage amplifier device at all levels of the emitter area are 320μm2, 1280μm2, 5760μm2, the chip includes an input and output 50Ω matching circuit, an area of only 1.9mm × 2.1mm. Amplifier with a single 5V power supply, linear gain in the 2.4 ~ 2.5GHz frequency range of 27dB, 2dB gain compression point output saturation power of 37dBm, additional power efficiency of 46%.