日本日立中研研制出GaAs系半导体激光器与驱动用FET集成化的光电子集成器件。该器件具有高速工作、高可靠性、低噪声等优点。半导体激光器和FET是用MO-CVD法进行晶体生长,用10比1的缩小投影曝光装置制作。该器件把半导体激光器、驱动电路、监测用探测器、监控输出电路等集成在0.9×2mm芯片上。 Hitachi Research Institute of Japan developed a GaAs semiconductor laser and drive FET integrated optoelectronic integrated devices. The device has high-speed operation, high reliability, low noise and other advantages. Semiconductor lasers and FETs were grown by the MO-CVD method using a 10: 1 reduction projection exposure apparatus. The device integrates a semiconductor laser, driver circuit, monitoring detector, monitoring output circuit, etc. into a 0.9 × 2mm chip.