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对透明共晶系ＣＢｒ４－８．４ｗｔ－％Ｃ２Ｃ１６生长的典型层片共晶组织强制熔化进行实时实地观测．表明相对于强制生长时的“界面滞后”现象，熔化界面温度高于静止时界面温度，熔化界面比静止界面更靠近热端，称为“界面超前”．随熔化速度增大，“界面超前量”增大；共晶组织分层熔化，出现两个熔化界面，α和β相熔化秩序不同，α，β相分别单独熔化，两熔化界面的相对位置由α，β相成分，熔化速度和共晶相间距等因素决定．
The typical eutectic microstructure of the transparent eutectic CBr4-8.4wt-% C2C16 is forcibly observed in real time. It indicates that the temperature of the melting interface is higher than the temperature of the interface when stationary, and the melting interface is closer to the hot end than the stationary interface, which is called “interface leading” relative to the phenomenon of “interface lag” during forced growth. As the melting rate increases, the amount of “interface advance” increases. The eutectic structure melts in layers, and two melting interfaces appear. The α and β phases melt in different order, the α and β phases are melted separately, and the relative positions of the two melting interfaces α, β phase composition, melting rate and eutectic phase spacing and other factors.