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运用漂移-扩散模型,对表面型静电感应晶闸管的导通特性进行了数值模拟。分析表明,表面型静电感应晶闸管(SITH)具有与纵向结构SITH类似的负阻导通特性,而且表面型结构的各电极相对面积比纵向结构要小很多,阴极和栅极之间的电容更小,从而具有更快的开关速度和更高的灵敏度。对表面型SITH的电势分布、载流子分布以及阳极I-V特性进行了深入地计算和分析。显示数值模拟结果十分接近实际测量结果,模拟中也发现栅极的位置对栅极的控制性能的影响很大。
Using the drift-diffusion model, the conduction characteristics of the surface-type electrostatic induction thyristor are numerically simulated. The analysis shows that the surface-type electrostatic induction thyristor (SITH) has negative resistance conduction characteristics similar to the vertical structure SITH, and the surface area of each electrode has a smaller relative area than the vertical structure and the capacitance between the cathode and the gate is smaller, Which has faster switching speed and higher sensitivity. The potential distribution, carrier distribution and I-V characteristics of the surface-type SITH were deeply calculated and analyzed. It shows that the numerical simulation results are very close to the actual measurement results. The simulation also found that the position of the gate has a great influence on the control performance of the gate.