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对提高快速晶闸管发射区ne与基区Pb杂质浓度比值Ne／Nb，降低器件通态压降进行了理论分析；叙述了开管Ga扩散技术的特点，并与闭管Ga扩散和B－A1双质P到扩散方式进行了比较。实验证明，用开管Ga扩散工艺制造快速晶闸管，可明显改善器件的通态伏安特性。
The theoretical analysis is made on the improvement of Ne / Nb ratio of Ne and Nb in the fast thyristor emitter region and the base region, and the characteristics of open Ga diffusion are described. The qualitative P to diffuse ways were compared. Experiments show that Ga by open-tube diffusion process to manufacture fast thyristor, can significantly improve the device on-state volt-ampere characteristics.