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Silicon nanocone arrays with metal silicide(Fe and Cr)-enriched apexes are fabricated on Si(100) substrate by the Ar+ion bombardment method. The nanocone arrays show excellent field emission properties. A high current density(J) of ～0.33 mA/cm2under a field of ～3 V/μm, a very low turn-on field of ～1.4V/μm, and a very large enhancement factor of ～9466 are also obtained. The emission J of Si nanocone arrays remains extremely stable for long periods of time(24 h).
Silicon nanocone arrays with metal silicide (Fe and Cr) -enriched apexes are fabricated on Si (100) substrates by the Ar + ion bombardment method. The nanocone arrays show excellent field emission properties. A high current density (J) of ~ 0.33 mA / cm2under a field of ~ 3 V / μm, a very low turn-on field of ~1.4 V / μm, and a very large enhancement factor of ~ 9466 are also obtained. The emission J of Si nanocone arrays remains extremely stable for long periods of time (24 h).