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利用高频感应的石墨加热器对注BF_2~+的硅片进行快速退火能获得比常规退火更浅的结。对这两种退火所引起的B和F的扩散进行了比较。实验观察到F原子分布的双峰,是注入层再结晶时F原子的外扩散所致。
The use of high frequency induction graphite heater to anneal the BF_2 ~ + wafers can achieve a shallower junction than conventional annealing. The diffusion of B and F caused by these two anneals was compared. The bimodal distribution of F atoms observed experimentally is due to the diffusion of F atoms during the recrystallization of the implanted layer.