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近十年来发展起来的原子层外延技术(ALE)实际上是对现有气相外延技术(蒸发、沉积、分子束外延、氯化物外延和MOCVL))的一种改进.它以固体衬底表面的化学反应为基础.因此用ALE方法可以获得精确膜厚、符合化学比、高化学稳定性和结构完整而均匀的化合物薄膜。本综述介绍了ALE的工作原理、特点及其进展概况.指出,ALE方法除了用于研制成功性能优良的太面积薄膜电致发光显示器以外,近年来还在单晶衬底上生长出突变异质结、多量子阱结构和超晶格,从而为研究低维数半导体薄层结构提供了一个媒介。
Atomic layer epitaxy (ALE), developed over the past decade, is actually an improvement on the existing vapor phase epitaxy techniques (evaporation, deposition, molecular beam epitaxy, chloride epitaxy and MOCVL) Chemical reaction.Based on the ALE method, it is possible to obtain a compound film with precise film thickness, chemical ratio, high chemical stability and structural integrity and uniformity. This review summarizes the working principle, characteristics and progress of ALE, and points out that in addition to the ALE method for the development of ultra-thin-film electroluminescent displays with excellent performance, the ALE method has also developed mutant heterogeneities on single crystal substrates in recent years Junction, multiple quantum well structure and superlattice, thus providing a medium for the study of low-profile semiconductor thin-film structures.