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高功率垂直腔面发射半导体激光器(VCSEL)内部的自生热是影响器件功能的重要因素,为改善器件的散热性能,采用AlN膜做钝化层研制了基于AlN膜钝化层的980 nm高功率VCSEL器件。对高功率VCSEL进行模拟仿真与理论分析表明,采用AlN膜钝化层可以改善器件内部的温度分布,降低器件的热阻,提高器件的散热能力;采用相同的外延片与工艺实验制备了出光孔径同为200μm的AlN膜钝化层和传统的SiO2膜钝化层的高功率VCSEL器件;对两种不同的钝化层的器件性能进行了实验对比测试,结果表明AlN膜钝化层的高功率VCSEL器件室温下的最大输出功率可达470 mW,比同温度下SiO2膜钝化层的高功率VCSEL器件的最大输出功率高140 mW。AlN膜钝化层的高功率VCSEL在外界温度80℃时,仍能正常激射,具有良好的温度适应性与光电性能。
The self-generated heat inside VCSEL is an important factor that affects the device’s function. In order to improve the heat dissipation performance of the device, a passivation layer made of AlN film was used to fabricate 980 nm high-power AlN passivation layer based on passivation layer VCSEL device. Simulation and theoretical analysis of high power VCSEL show that using AlN film passivation layer can improve the temperature distribution within the device, reduce the thermal resistance of the device and improve the heat dissipation capability of the device. Using the same epitaxial wafer and process experiments, The same high power VCSEL device with 200μm AlN film passivation layer and conventional SiO2 film passivation layer; the experimental performance comparison of the device performance of two different passivation layer shows that the high power of AlN passivation layer The maximum output power of the VCSEL device at room temperature is up to 470 mW, which is 140 mW higher than the maximum output power of a high-power VCSEL device with a SiO2 passivation layer at the same temperature. AlN film passivation layer of high power VCSEL in the external temperature of 80 ℃, can still normal lasing, with good temperature adaptability and photoelectric properties.