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本文主要介绍 DX30型硅超高频大功率静电感应晶体管的温度特性。这种器件在+12℃至—196℃的温度范围内工作正常。给出了不同温度的输出特性曲线,以及给出了漏电流 I_D 在大电流下负温度系数的曲线和跨导 G_m、电压放大系数μ随温度变化的曲线等。DX30是一种多数载流子的器件,没有二次击穿,因而抗烧毁能力强、抗辐照性能好、适合于大功率线性运用的一种高频功率器件。
This article describes the DX30 silicon ultra-high frequency electrostatic induction transistor temperature characteristics. This device is working well in the temperature range of + 12 ° C to -196 ° C. The output characteristic curve of different temperature is given, and the curve of the negative temperature coefficient of leakage current I_D at high current and the curve of transconductance G_m and voltage amplification coefficient μ with temperature are given. DX30 is a majority carrier device, no secondary breakdown, so anti-burn ability, anti-radiation performance, suitable for high-power linear applications of a high-frequency power devices.