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目前国内外广泛采用的硅外延生长法是卧式反应器的化学汽相沉积法,生长的外延层厚度一致性较差.在同一炉内,加热体首尾不同位置衬底生长的外延层厚度是不一致的;加热体边缘和中央位置衬底生长的外延层厚度也是不一致的.尽管多方消除加热体各处温差,外延层厚度不一致性仍然存在.一般情况,为了得到高质量的外延层、生长温度必须相当高,大多数的外延过程是在质量转移控制区域内进行的.显然,要改善外延层厚度一致性必须考虑决定气相质量转移的机构.本文着重讨论反应气体流经加热体时所受阻力及气体流型对硅外延层厚度均匀性的影响,并作了实验研究,硅外延层厚度均匀性得到明显改善.
At present, the silicon epitaxial growth method widely used at home and abroad is a chemical vapor deposition method of a horizontal reactor, and the epitaxial layer growth consistency is poor.In the same furnace, the thickness of the epitaxial layer grown at different positions of the heating body in different positions is The thickness of the epitaxial layer grown on the edge of the heating body and the center of the substrate is also inconsistent.Although the temperature difference across the heating body is eliminated in many ways, the thickness inconsistency of the epitaxial layer still exists.Generally, in order to obtain a high quality epitaxial layer, the growth temperature Must be quite high, and most of the epitaxy is performed within the mass transfer control area.Obviously, to improve the uniformity of the epitaxial layer, the mechanism that determines the mass transfer of the gas phase must be taken into account.This article focuses on the resistance of the reaction gas flowing through the heating body And the effect of gas flow pattern on the thickness uniformity of the Si epitaxial layer, and the experimental study has been done, the thickness uniformity of the Si epitaxial layer has been significantly improved.