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本文描述双极场引晶体管(BiFET)飘移扩散理论,包括薄纯基上两个等同金属氧化物硅( MOS)栅.把两维晶体管分解成两个一维问题,以表面势为参变量,得到解析方程.提供实用硅基和氧化层厚度范围内,随直流电压变化,输出和转移电流和电导总量和飘移扩散分量.显著部分的飘移电流来自横向电场平方的纵向梯度.
This paper describes the drift diffusion theory of bipolar field-effect transistors (BiFETs), including two equivalent metal-oxide-silicon (MOS) gates on thin pure bases.The two-dimensional transistor is decomposed into two one-dimensional problems. The equation provides output and transfer current and total conductance and drift diffusion components over a range of practical silicon-based and oxide thicknesses that vary with DC voltage. A significant portion of the drift current comes from the longitudinal gradient of the lateral electric field squared.