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采用Ga_(0.47)In_(0.53)As,可制作快速、暗电流低和量子效率高的光电探测器。本文将从这种三元系光电探测器的设计和工作性能两个方面叙述与晶体生长和载流子输运有关的物理特性。结果表明:Ga_(0.47),In_(0.53)As是制作一些重要半导体器件的好材料。与其它半导体光电二极管相此,Ga_(0.47),In_(0.53)As光电探测器也是1.0～1.7μm波段极为灵敏的探测器。人们可以指望,在1.55μm低损耗(α<0.3dB·Km~(-1))、低色散光纤数字传输线路中,采用这样的探测器可以使以100Mb/S、无中继的传输线距离超过150公里。
Ga_ (0.47) In_ (0.53) As can be used to fabricate a photodetector that is fast, has low dark current, and has high quantum efficiency. This article describes the physical properties associated with crystal growth and carrier transport from the design and performance aspects of this ternary photodetector. The results show that Ga_ (0.47), In_ (0.53) As are good materials for making some important semiconductor devices. Compared with other semiconductor photodiodes, Ga_ (0.47) and In_ (0.53) As photodetectors are also very sensitive detectors in the 1.0 ~ 1.7μm band. One can expect that with a 1.55μm low loss (α <0.3dB · Km -1), low dispersion optical fiber digital transmission line, such a detector can be used at 100Mb / S, relayless transmission line distance exceeds 150 kilometers.