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在三代微光像管中,微通道板(MCP)输入面上覆盖一层超薄离子壁垒膜(IBF),目的是保护光电阴极,延长像管使用寿命。为了深入研究离子壁垒膜的特性,本文对Al2O3和SiO2两种离子壁垒膜的粒子阻透能力进行了蒙特卡罗模拟,结果表明:5 nm厚Al2O3和SiO2离子壁垒膜的死电压分别为230～240 V和220～230 V之间;输入能量0.24 keV时背散射电子数最高达19%左右;输入能量0.8 keV时,Al2O3膜电子透过率为87.16%,SiO2膜为88.12%,电子透过的极限膜厚前者为15 nm,后者为16 nm;对于输入能量0.26 keV的C+、N+、O+离子,Al2O3膜的离子阻当率为95%～99%;Al2O3离子壁垒膜在厚度5 nm时具有较好的电子透过率和较高的离子阻挡率。
In the third generation of micro-light tube, the input surface of the microchannel plate (MCP) is covered with an ultra-thin ion barrier (IBF) film for the purpose of protecting the photocathode and prolonging the useful life of the image tube. In order to further study the properties of ion barrier films, Monte Carlo simulation of particle barrier properties of two kinds of barrier films of Al2O3 and SiO2 was carried out. The results showed that the dielectrophores of 5 nm thick Al2O3 and SiO2 ion barrier films were 230 ~ 240 V and 220-230 V. The electron backscattering number was up to 19% at the input energy of 0.24 keV, the electron transmittance of the film was 87.16% and the film was 88.12% at the input energy of 0.8 keV, The former is 15 nm and the latter is 16 nm. The ion resistance of Al2O3 film is 95% ~ 99% for C +, N +, O + ions with input energy of 0.26 keV. Has better electron transmittance and higher ion blocking rate.