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采用金属有机气相外延的方法制备高质量氮化镓薄膜。采用真空热蒸发的方法蒸镀一层金膜,通过传统紫外曝光及湿法腐蚀的方法,制备得到具有金属-半导体-金属(MSM)结构的紫外光电探测器。通过对器件进行不同温度不同时间的热退火处理,使器件的性能得到了改善。在3 V偏压下,器件的暗电流仅为200 pA,响应度的峰值出现在362 nm处,其对应的探测率为1.2×1011cm.Hz1/2/W。对器件性能影响的形成机理进行了深入分析,主要归因于热处理将Au原子引入到薄膜中。
High quality gallium nitride thin films were prepared by metal-organic vapor phase epitaxy. A layer of gold film was deposited by vacuum thermal evaporation. The UV detector with metal-semiconductor-metal (MSM) structure was prepared by the conventional UV exposure and wet etching. By the device at different temperatures at different times of thermal annealing, the device performance has been improved. At 3 V bias, the dark current of the device is only 200 pA and the peak of the responsivity appears at 362 nm, which corresponds to a detection rate of 1.2 × 1011 cm.Hz1 / 2 / W. The forming mechanism of device performance is deeply analyzed, mainly due to the introduction of Au atoms into the film by heat treatment.