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本工作从原理和实验技术上证实了氯化物VPE技术可用于CaAs/Si异质外延.CaAs/Si外延层表面平整光亮.对外延层进行了组分测量、高分辨率电镜和X-射线衍射分析.结果表明,外延层是符合化学计量比的CaAs单晶,外延层浓度可控范围为10~(14)～10~(17)cm~(-3),纵向掺杂分布平坦.用这种材料制成MESFET样管,跨导为40mS/mm.
This work proves that the VPE technology can be applied to CaAs / Si heteroepitaxy by principle and experimental techniques.The surface of CaAs / Si epitaxial layer is smooth and bright.The composition of the epitaxial layer is measured by high resolution electron microscopy and X-ray diffraction The results show that the epitaxial layer is a stoichiometric CaAs single crystal, the controllable range of epitaxial layer is 10 ~ (14) ~ 10 ~ (17) cm ~ (-3) and the vertical doping distribution is flat Material MESFET sample tube made of transconductance of 40mS / mm.