最近 ,日本住友电工宣称 ,他们开发出一种ＧａＮ单晶生长新工艺 ,并制备出 2英寸ＧａＮ单晶片。这一新工艺是基于热动力学原理的 ,具体细节没有公布。该公司称正在投资 470万美元建设一条ＧａＮ单晶片生产线 ,计划明年批量生产。这一举措将对ＧａＮ器件的研究和生产产生巨大的 Recently, Sumitomo Electric Japan announced that they have developed a new GaN single crystal growth process and prepared 2-inch GaN single-wafer. This new process is based on the principle of thermodynamics, the details are not announced. The company said it is investing 4.7 million U.S. dollars to build a GaN single-wafer production line and plans to mass-produce it next year. This move will make a huge contribution to the research and production of GaN devices