论文部分内容阅读
由偏心静电单探针诊断了电子回旋共振等离子体增强化学汽相沉积（ＥＣＲＰＥＣＶＤ）反应室内等离子体密度的空间分布规律．结果表明在轴向位置Ｚ＝５０ｃｍ处，直径１２ｃｍ范围内等离子体密度分布非常均匀．分析了等离子体密度径向均匀性对沉积速率均匀性和薄膜厚度均匀性的影响．讨论了沉积制备一定薄膜厚度的Ｓｉ３Ｎ４薄膜的工艺重复性．研究了各种沉积工艺参数与Ｓｉ３Ｎ４薄膜沉积速率的相互关系．得到了ＥＣＲＰＥＣＶＤ技术在沉积薄膜时的工艺参数条件
The spatial distribution of plasma density in electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) reaction chamber was diagnosed by single electrostatic probe. The results show that at axial position Z = 50 cm, the plasma density distribution is very uniform across a diameter of 12 cm. The effect of plasma density radial uniformity on deposition rate uniformity and film thickness uniformity was analyzed. The process repeatability of depositing Si3N4 thin films with a certain film thickness was discussed. The relationship between various deposition parameters and Si3N4 thin film deposition rate was studied. The process parameters of ECR-PECVD technique were obtained