日本电气公司最近研制采用离子注入法制作高精度掩模版的技术,去年12月已在华盛顿举行的国际电子器件会议上发表。在集成电路和LSI制造工艺中,用于光刻工艺的掩模版是使用银乳剂的乳胶掩模和使用金属铬、氧化铬、氧化铁等金属或金属氧化物形成暗区的所谓硬掩模。采用贴紧或者投影的方法,让这些光掩模与涂敷了光刻胶的硅片相叠合,并用紫外线曝光,经过显影,光掩模上的电路图形就复印在硅片上。由于乳胶掩模使用了卤化银, NEC recently developed a technology that uses ion implantation to make a high-precision reticle, which was released at the International Electronics Conference in Washington last December. In integrated circuits and LSI manufacturing processes, a reticle used for a photolithography process is a so-called hard mask using a silver emulsion emulsion mask and a dark area using a metal or metal oxide of metal chromium, chromium oxide, iron oxide, or the like. Using close-fitting or projection methods, these photomasks are overlapped with the photoresist coated silicon and exposed to UV light. After development, the circuit pattern on the photomask is copied onto the silicon wafer. Due to the use of silver halide emulsion mask,