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作为第三代宽禁带半导体器件,GaN基肖特基势垒二极管(SBD)功率器件具有耐高温、耐高压和导通电阻小等优良特性,在功率器件方面具有显著的优势。概述了基于功率应用的GaN SBD功率器件的研究进展。根据器件结构,介绍了基于材料特性的GaN SBD和基于AlGaN/GaN异质结界面特性的GaN异质结SBD。根据器件结构对开启电压的影响,对不同阳极结构器件进行了详细的介绍。阐述了不同的肖特基金属的电学特性和热稳定性。分析了表面处理,包括表面清洗、表面等离子体处理和表面钝化对器件漏电流的影响。介绍了终端保护技术,尤其是场板技术对击穿电压的影响。最后探讨了GaN基SBD功率器件未来的发展趋势。
As a third generation wide band gap semiconductor device, GaN-based Schottky barrier diode (SBD) power devices have excellent characteristics of high temperature resistance, high voltage resistance and low on-resistance, and have significant advantages in power devices. The research progress of GaN SBD power devices based on power application is summarized. According to the device structure, GaN SBD based on material properties and GaN heterostructure SBD based on AlGaN / GaN heterojunction interface characteristics are introduced. According to the influence of the device structure on the turn-on voltage, different anode structure devices are introduced in detail. The electrical properties and thermal stability of different Schottky metals are described. The effects of surface treatment, including surface cleaning, surface plasma treatment and surface passivation, on leakage current of the device were analyzed. The effect of terminal protection technology, especially field plate technology, on breakdown voltage is introduced. Finally, the future development trend of GaN-based SBD power devices is discussed.