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这里我们讨论Si气相外延生长的问题。 我们知道,对外延工艺最基本的要求就是要能精确控制外延层的厚度和保证外延层的单晶晶体质量。而这与外延生长速度的快慢及其精确控制直接有关。若能精确控制外延生长速度,则就能实现对外延层厚度的精确控制。外延晶体质量显然是与生长速度有关的。因为,若生长速度太快,以致Si原子来不及在Si片表面上整齐排列,则必将造成缺陷以至发展成为多晶层。下面就从考虑生长速度出发来讨论如何选择外延条件,以满足厚度控制和晶体质量的要求。
Here we discuss the Si-phase epitaxial growth problems. We know that the most basic requirement of the epitaxial process is to precisely control the thickness of the epitaxial layer and ensure the quality of the single crystal of the epitaxial layer. This is directly related to the speed of epitaxial growth and its precise control. If you can precisely control the epitaxial growth rate, you can achieve precise control of the epitaxial layer thickness. The quality of epitaxial crystals is clearly related to the growth rate. Because, if the growth rate is too fast, so that Si atoms too late to align the surface of the Si chip, it is bound to cause defects as well as the development of a polycrystalline layer. The following from the consideration of the growth rate to discuss how to choose the epitaxial conditions to meet the thickness control and crystal quality requirements.