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研究了在砷化镓上欧姆接触形成机理,并提出了一种新型的欧姆接触六层金属系统(Ni/Ge/Au/Ge/Ni/Au)。在n型GaAs样品上实验了在380～460℃合金温度和50～120s合金时间下形成欧姆接触,在400℃、60s下典型的欧姆接触值为2.1x10-7Ω·cm2,同时合金后表面形貌光滑、平整。
The mechanism of ohmic contact formation on gallium arsenide has been studied and a novel ohmic contact six-layer metal system (Ni / Ge / Au / Ge / Ni / Au) has been proposed. On the n-type GaAs samples, the ohmic contact was formed at 380-460 ℃ and 50-120 s, and the typical ohmic contact was 2.1x10-7Ω · cm2 at 400 ℃ for 60s. Look smooth, smooth.