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利用选择性横向外延生长法可以沿不同的生长方向生长出不同的GaN半极性面,进而可以生长出不同的半极性多量子阱LED结构。这种结构可以实现单芯片LED的多波长发光。结果表明:通过生长模板和生长条件的改变可以控制不同GaN半极性面的形成,从而控制InGaN/GaN多量子阱LED的发光波长从蓝光到绿光甚至是白光可调控。
The selective lateral epitaxial growth method can grow different GaN semi-polar planes along different growth directions, and thus can grow different semi-polar multi-quantum well LED structures. This structure can achieve single-chip LED multi-wavelength light. The results show that the formation of different GaN semi-polar planes can be controlled by changing the growth template and growth conditions, and the emission wavelength of InGaN / GaN MQW LED can be controlled from blue light to green light or even white light.