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利用双离子束外延技术制备了CeO2/Si薄膜,观察到了CeO2室温蓝光发光以及低温紫光致发光(PL)现象.利用XRD和XPS对薄膜结构及价态进行分析后表明,CeO2的发光机制是由于电子的Ce4f→O2p跃迁和缺陷能级→O2p能级跃迁共同作用的结果,并且这些缺陷能级位于Ce4f能级上下1 eV的范围内.
CeO2 / Si thin films were prepared by dual-ion beam epitaxy, and the blue luminescence at room temperature and the PL photoluminescence (PL) at room temperature were observed.Analysis of the structure and valence of the films by XRD and XPS showed that the emission mechanism of CeO2 was due to Electron Ce4f → O2p transition and defect level → O2p level transition as a result of the interaction, and these defect levels are located in the Ce4f level above and below 1 eV range.