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Ｃｒｅｅ公司研制成工作频率 10ＧＨｚ的ＧａＮＨＥＭＴ ,脉冲ＲＦ功率为 4 0Ｗ。该器件可用于混合放大器 ,12ｍｍ器件的特点 :ＰＡＥ为 2 0 % ,功率密度为 3.39Ｗ /ｍｍ。不久前在康奈大学的会议上宣布最新的结果 ,Ｃｒｅｅ公司宣称 ,这种晶体管提供的功率比任一ＧａＡｓ器件?
Cree developed GaNHEMT operating frequency of 10GHz, pulsed RF power of 40W. The device can be used in hybrid amplifiers. The 12mm device features 20% PAE and a power density of 3.39W / mm. Not long ago announced at the latest conference results at Cornell University, Cree claimed that this transistor offers more power than either GaAs device?