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采用湿法腐蚀方法研究了HCl,H3PO4和HBr等不同腐蚀液在显示<100>InP晶片位错中的作用,及腐蚀温度、腐蚀时间、光照条件等因素对腐蚀速率和腐蚀效果的影响,最后统计3英寸(1英寸=2.54 cm)<100>InP晶片位错密度分布,分析其位错产生原因。经过实验表明,单一的HCl或H3PO4腐蚀剂无法显示出<100>InP晶片的位错坑,而单一的HBr能够很好地显示出四方形的位错坑。在<100>InP晶片的混合位错腐蚀液中,HBr占主导作用,HCl及H3PO4起辅助作用。在腐蚀过程中提供光照或者提高腐蚀温度都可以明显提高腐蚀速率。在光照条件下,半导体会激发出空穴-电子对,在半导体表面增加载流子可以有效提高反应速率,从而提高腐蚀速率。化学反应速率常数k随温度升高呈指数升高,所以提高腐蚀温度可以有效提高腐蚀速率。InP晶片位错主要是由晶体内部热应力引起的。
The effects of different etching solutions such as HCl, H3PO4 and HBr on the dislocation of <100> InP wafers and the effects of etching temperature, etching time and illumination conditions on the corrosion rate and corrosion effect were studied by wet etching method. Finally, The dislocation density distribution of <100> InP wafers was measured on a 3 inch (1 inch = 2.54 cm), and the cause of dislocation was analyzed. Experiments show that a single HCl or H3PO4 etchant can not display the dislocation pit of the <100> InP wafer, and a single HBr can well show a square dislocation pit. In the mixed dislocation etching solution of <100> InP wafer, HBr plays a dominant role and HCl and H3PO4 play a supporting role. In the corrosion process to provide light or increase the corrosion temperature can significantly improve the corrosion rate. In light conditions, the semiconductor will be excited hole-electron pairs, increasing the carrier surface in the semiconductor can effectively improve the reaction rate, thereby increasing the corrosion rate. The chemical reaction rate constant k increases exponentially with increasing temperature, so raising the corrosion temperature can effectively increase the corrosion rate. InP wafer dislocation is mainly caused by thermal stress inside the crystal.