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V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si3N4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS” for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.
V-shaped GaN high-electron-mobility transistors (HEMTs) were fabricated and were systematically. A V-shaped recess geometry was obtained using an improved Si3N4 recess etching technology. higher peak extrinsic transconductance due to a narrowed gate foot. either, both gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco “ATLAS ”for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.