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Inorganic buffer layers such as SiO_2 or TiO_2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (LAD) at room temperature, and the effects of SiO_2 and TiO_2 on the bending resis-tance performance of flexible ITO films were investigated. The results show that ITO films with SiO_2 or TiO_2 buffer layer have better resis-tance stabihties compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. ITO films with SiO_2 buffer layer have better resistance sta-bilities compared to ones with TiO_2 buffer layer after the ITO Films are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO_2 is stronger than that of TiO_2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO_2 and TiO_2 buffer layers can effectively improve the crystal-linity of ITO films in (400), (440) directions.