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光刻过程中 ,抗蚀剂内部光敏混合物 (PAC)浓度受光场的影响呈驻波分布 ,导致抗蚀剂显影后的侧壁轮廓成锯齿状。分析了后烘 (PEB)对PAC浓度分布的影响 ,模拟了不同后烘扩散长度下的抗蚀剂显影轮廓 ,从模拟结果可知利用后烘可明显减小驻波效应 ,得到平滑的抗蚀剂显影轮廓 ,提高光刻质量。
During photolithography, the concentration of photosensitive resist (PAC) inside the resist is distributed in a standing wave due to the influence of the light field, resulting in jagged sidewall profiles of the developed resist. The influence of post-bake (PEB) on the distribution of PAC concentration was analyzed, and the development profile of resist under different post bake diffusion length was simulated. It can be seen from the simulation results that the post-bake can obviously reduce the standing wave effect and obtain a smooth resist Develop the outline to improve the lithography quality.