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采用高分辨X射线衍射对在蓝宝石(0001)面生长的GaN外延膜的漫散射进行了研究.结果表明,GaN薄膜中存在缺陷团,其浓度随着穿透位错密度的增加而增加,其平均半径呈相反趋势.基于位错是点缺陷的聚集区,缺陷团优先在位错附近形成的效应对结果进行了解释.同时发现电子迁移率随缺陷团浓度的增加而减少.
Diffuse scattering of GaN epitaxial films grown on sapphire (0001) plane was investigated by high-resolution X-ray diffraction. The results show that there are defects in the GaN thin films, and their concentration increases with the increasing of dislocation dislocation density The average radius shows the opposite trend.Based on the fact that the dislocations are the gathering points of the point defects, the effect of the dislocation clusters preferentially forming near the dislocations explains the results, and the electron mobility decreases with the concentration of the defect clusters.