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一、前言随着半导体工业的发展,对硅单晶的纯度要求越来越高,硅单晶中的杂质水平,一般在ppb级以下。因此,硅单晶中痕量杂质的分析,用一般的化学分析方法已不能满足要求。目前,多采用灵敏度高的中子活化分析方法。本工作采用非破坏性的中子活化分析方法,分析了不同硅材料厂提供的硅多晶和区熔硅单晶样品,给出了Cu,Na,Au,La,Ga,Sb,Cr.Sc、Fe、Ni、Zn.Ag.Cs、K.Ce等十六种杂质元素的含量或探测极限值。
I. INTRODUCTION With the development of the semiconductor industry, the purity of the silicon single crystal needs to be higher and higher. The impurity level in the silicon single crystal is generally below ppb level. Therefore, the analysis of trace impurities in silicon single crystals can not meet the requirements by the general chemical analysis methods. At present, the use of high sensitivity neutron activation analysis method. In this work, a non-destructive neutron activation analysis method was used to analyze the samples of silicon polycrystalline and zone-melting silicon provided by different silicon material factories. Cu, Na, Au, La, Ga, Sb, Cr.Sc , Fe, Ni, Zn.Ag.Cs, K.Ce and other 16 kinds of impurity elements or detection limit value.