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用液相外延(LPE)法生长了单层、双层和三层结构的外延层。在1(1/2)吋长的片子上生长的外延层有可控性好、厚度均匀以及表面好等特征。多层结构中的每层生长厚度为0.3～30微米。77°K的霍尔迁移率从73,800厘米~2/伏·秒,(N=1.4×10~(15)厘米~(-3))变到24,000厘米~2/伏·秒(N=1.3×10~(16)厘米~(-3))。把净载流子浓度和熔体中Sn的浓度作对比,计算了Sn在GaAs中的分凝系数,对<100>GaAs为7.9×10~(-5),对<111B>GaAs为2.6×10~(-4)。由这种材料并用一般的倒装技术而制造的耿氏器件,在54千兆赫下有高达4％的连续效率,而在9～10千兆赫时,连续效率猛增至12.5％。这一技术已被成功地用来生长为制造变容管、雪崩管、场效应管和光阴极所需的外延层。
Epitaxial layers with single, double and triple layers were grown by liquid phase epitaxy (LPE). Epitaxial layers grown on a 1 (1/2) inch long film have good controllability, uniform thickness, and good surface finish. Each layer in the multilayer structure has a thickness of 0.3 to 30 microns. The Hall mobility at 77 ° K changed from 73,800 cm 2 / V · sec to 24,000 cm -2 / V · sec (N = 1.3 × 10 -3 cm -1) (N = 1.4 × 10 15 cm -3) 10 ~ (16) cm ~ (-3)). By comparing the net carrier concentration with the concentration of Sn in the melt, the segregation coefficient of Sn in GaAs was calculated, which was 7.9 × 10 -5 for <100> GaAs and 2.6 × for GaAs with <111B> 10 ~ (-4). Gunn devices made from this material and using the general flip-chip technology have a continuous efficiency of up to 4% at 54 GHz and a continuous efficiency of 12.5% at 9-10 GHz. This technique has been successfully used to grow epitaxial layers for varactors, avalanche tubes, field-effect transistors, and photocathodes.