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采用直流磁控反应溅射方法 ,在Si(111)基片上成功地沉积了表面粗糙度小、组成均匀、以 (10 0 )面和 (0 0 2 )面择优取向的AlN薄膜 ,研究了溅射气压、溅射功率和靶基距对AlN薄膜结构及晶面取向的影响。结果表明 ,溅射气压低 ,靶基距短 ,有利于以 (0 0 2 )面择优取向 ;相反 ,溅射气压高 ,靶基距长 ,则对 (10 0 )面择优取向有利 ;溅射功率过高或过低均不利于晶面择优取向。并从Al—N化学键的形成以及溅射粒子平均自由程的角度探讨了AlN压电薄膜晶面择优取向。
The AlN thin films with small surface roughness, uniform composition, (10 0) plane and (0 0 2) plane orientation were successfully deposited on Si (111) substrate by direct current magnetron reactive sputtering. Effect of Gas Pressure, Sputtering Power and Target Distance on the Structure and Orientation of AlN Films. The results show that the sputtering pressure is low and the target distance is short, which favors the preferential orientation of (0 0 2) plane. On the contrary, the high sputtering pressure and long target pitch make the orientation of (10 0) Power is too high or too low are not conducive to the crystal face preferred orientation. The preferred orientation of the crystal plane of AlN piezoelectric thin film is discussed from the perspective of the formation of Al-N bonds and the mean free path of sputtered particles.