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本文研究了ＬＰ－ＭＯＣＶＤ对不同ｘ值的Ｉｎ１－ｘＧａｘＡｓ／ＩｎＰ生长条件，并且生长了压缩应变为０．５％三个不同阱宽的ＩｎＧａＡｓ／ＩｎＰ量子阱结构，利用７７ＫＰＬ光谱分析了能级同阱宽的关系，实现最窄阱宽为４．４ｎｍ，最小全半高峰宽为１７．０ｍｅｖ。
In this paper, the In1-xGaxAs / InP growth conditions of LP-MOCVD for different x values were studied, and InGaAs / InP quantum well structures with compressive strain of 0.5% and three different well widths were grown. Well width relationship to achieve the narrowest well width of 4.4nm, the minimum full width at half maximum of 17.0mev.