利用透射电子显微镜研究了气—液—固(VLS)法生长的β—SiC晶须中的孪晶构型。在竹节状的SiC晶须中,β—SiC节与含高密度堆垛层错(或一维无序)的节之间孪生相连,其李晶界为{111}_β;同时还观察到有的β-SiC节被{111}_β孪晶界分为两节。此外,在晶须的头部及分叉处还观察到了孪晶界平行晶须轴向的孪晶结构。利用选区电子衍射和像衍衬分析发现,这种双晶SiC晶须的孪晶面平行于基体的{001}_M。 The twin structure in β-SiC whiskers grown by gas-liquid-solid (VLS) method was investigated by transmission electron microscopy. In bamboo-like SiC whiskers, the β-SiC junctions are twinned with the sections containing high-density stacking faults (or one-dimensional disorder), and the Li grain boundaries are {111} _β. Simultaneously, Some β-SiC sections are divided into two sections by {111} _β twin boundaries. In addition, the twins in the twin parallel grain whiskers were also observed at the head and bifurcation of the whiskers. Using the selected area electron diffraction and image analysis, it is found that the twin planes of the twin SiC whiskers are parallel to the {001} _M of the matrix.