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采用不同溅射功率制备的铟镓氧化锌(IGZO)薄膜作为薄膜晶体管(TFT)的有源层,通过扫描电镜、霍尔效应测试仪,分析了溅射功率对IGZO薄膜形貌及电特性的影响,研究了不同IGZO溅射功率对IGZO-TFT栅偏压不稳定性的影响。结果表明,在一定范围内,低溅射功率使得IGZO薄膜的表面粗糙,缺陷较多,载流子浓度较低;在正栅极偏压作用下,低IGZO薄膜溅射功率导致较大的IGZO-TFT阈值电压漂移;在负偏压作用下不产生阈值电压漂移。
An indium gallium zinc oxide (IGZO) thin film with different sputtering powers was used as the active layer of thin film transistor (TFT). The scanning electron microscope and Hall effect tester were used to analyze the influence of sputtering power on the morphology and electrical properties of IGZO thin films The influence of different IGZO sputtering powers on the gate bias instability of IGZO-TFT was investigated. The results show that in a certain range, the IGZO thin film has a rough surface with many defects and a low carrier concentration due to the low sputtering power. Under the positive gate bias, the sputtering power of the IGZO thin film leads to larger IGZO -TFT threshold voltage drift; no threshold voltage drift occurs under negative bias.