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V2 O5薄膜具有很好的离子注入 /退出可逆性 ,是最有潜力的锂离子储存层的候选材料之一。它的电学特性与制备方法、化学计量比、结构和取向等有直接关系 ,仔细控制工艺参量是制备出在锂电池上应用的V2 O5薄膜关键。研究中采用脉冲磁控反应溅射方法 ,通过精确地控制氧分压、基底温度等关键工艺参量 ,在石英玻璃和硅片上制备V2 O5薄膜。利用X射线衍射和X射线光电子谱 ,分析了薄膜的成分、相结构、结晶和价态情况 ,用原子力显微镜表征了薄膜的微观结构 ,用分光光度计测量从 2 0 0～ 2 5 0 0nm波段V2 O5薄膜的透射和反射光谱 ,对薄膜的电学性能也进行了测量和分析。结果表明 ,V2 O5薄膜纯度高、相结构单一、结晶度好。高低温电阻变化 2个量级 ,薄膜的光学能隙为 2 .4 6eV。
The V2 O5 film has good ion implantation / withdrawal reversibility and is one of the most promising candidate materials for lithium ion storage layers. Its electrical properties and preparation methods, stoichiometry, structure and orientation are directly related to careful control of process parameters is the preparation of lithium batteries used in the V2 O5 film key. In the study, pulsed magnetron reactive sputtering method was used to prepare V2 O5 thin films on quartz glass and silicon wafer by precisely controlling the key parameters such as oxygen partial pressure and substrate temperature. The composition, phase structure, crystallization and valence state of the films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. The microstructure of the films was characterized by atomic force microscopy. The transmission and reflection spectra of V2 O5 films were also measured and analyzed for the electrical properties of the films. The results show that the V2 O5 film has high purity, single phase structure and good crystallinity. High and low temperature resistance changes two orders of magnitude, the optical gap of the film is 2. 46eV.