碳化矽的渗碳和氧化是苏联发明的热处理方法。 碳化矽渗碳 碳化的渗碳的原理是分解碳化矽(Sic)。渗碳 时,使川含熔解性盐类盐槽,盐类的成份为75-85 %的碳酸钠(Na2co3)和15-10%的氯化钠(NaCl ) 槽中并加入粉碎至0. 5- 1.0公厘的碳化矽(Sic)10% 左右。 纯碳化矽在2200°C才能分解 Carburizing and oxidation of silicon carbide was invented by the Soviet Union. Carburizing carburizing Carburizing carburizing principle is to decompose silicon carbide (Sic). Carburizing, so that the Sichuan salt bath containing molten salts, salts of the composition of 75-85% sodium carbonate (Na2co3) and 15-10% sodium chloride (NaCl) tank and added to crush to 0.5 - 1.0 mm silicon carbide (Sic) about 10%. Pure silicon carbide can decompose at 2200 ° C