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二维过渡金属硫族化合物纳米材料由于是不同带隙的半导体,同时有些在地球上储量丰富,受到人们广泛的关注.在本文中,介绍了用于二维材料场效应晶体管制备的光刻图形转移技术.该方法可以低成本、简单、有效地获得晶体管,同时对二维材料的损伤较小,可以获得高性能的二维材料晶体管;其次,介绍了Co掺杂MoS_2双层纳米片的生长及电学输运研究,可以通过控制生长过程中硫的浓度来改变纳米片的形貌,随着温度的升高,最终可以获得CoS_2/MoS_2六边形结构,电学测试表明Co掺杂MoS_2双层纳米片显n型,而CoS_2/MoS_2六边形结构具有很高的电导率;还介绍了垂直双层SnS_2/MoS_2异质结的气相生长及光电性能研究,这种异质结具有很大的带阶,能带结构呈现Ⅱ型,在异质结区域,出现了强烈的光致发光谱淬灭,这种异质结与相应的单体材料相比,具有增强的光电性能.最后,对二维材料的未来研究进行一些展望.
Two-dimensional transition-metal chalcogenide nanomaterials have attracted much attention due to their different bandgap semiconductors and their abundance on the earth. In this paper, lithography patterns for the fabrication of two-dimensional material field-effect transistors The method can obtain low-cost, simple and effective transistors and less damage to two-dimensional materials, and can obtain high-performance two-dimensional material transistors. Secondly, the growth of Co-doped MoS 2 double-layer nanosheets And electrical transport studies, the morphology of nanosheets can be changed by controlling the concentration of sulfur in the growth process. With the increase of temperature, the hexagonal structure of CoS_2 / MoS_2 can be finally obtained. The electrical tests show that Co-doped MoS_2 double layer The nanosheets are n-type, while the hexagonal structures of CoS_2 / MoS_2 have high conductivity. The vapor phase growth and photoelectric properties of the vertical double-layered SnS_2 / MoS_2 heterojunction are also described. The heterojunction has a large Band order, the band structure appears Type II, in the heterojunction region, the emergence of a strong quenching of the photoluminescence spectrum, the heterojunction with the corresponding monomer material, compared with the enhanced photoelectric properties.Finally, Two-dimensional material Future research some prospects.