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采用改进的坩埚下降法成功生长了硅酸铋Bi12SiO20(BSO)单晶,探讨了工艺参数对晶体生长的影响.用电子探针方法研究了硅酸铋晶体中的铂金包裹体及其相关缺陷.铂金包裹物的尺寸一般在30μm～5mm之间.包裹物经常导致晶体开裂,使成品率大为降低.铂坩埚中的杂质是导致坩埚受侵蚀的主要原因,通过延长铂坩埚熔炼时间和适当降低晶体生长炉温,可明显减少铂包裹体及其相关缺陷.通过优化生长工艺,获得了尺寸为50mm×35mm×35mm的优质BSO单晶.
The bismuth silicate Bi12SiO20 (BSO) single crystal was successfully grown by the improved crucible descent method, and the influence of the process parameters on the crystal growth was discussed.The platinum inclusion in the bismuth silicate crystal and its related defects were studied by the electronic probe method. The size of the platinum package is generally between 30μm ~ 5mm. Wrapping often lead to crystal cracking, so that the yield is greatly reduced. Platinum crucible impurity is the main cause of crucible erosion by prolonging the platinum crucible melting time and appropriate reduction The growth temperature of the crystal can significantly reduce the platinum inclusions and their related defects. By optimizing the growth process, a high quality BSO single crystal with dimensions of 50mm × 35mm × 35mm has been obtained.