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TiN 材料具有高熔点(2949℃)、高硬度、高温化学稳定性及良好的导热、导电性,已广泛应用于耐高温、耐磨损领域。TiN 晶须除具有以上特点外,由于它在结构上接近理想单晶,有着较高的抗拉强度,在晶须增强复合材料中很有发展前途。近年来,日本、波兰、美国等国科学家已开展了 TiN 晶须的研制工作,而国内尚属空白。高桥武彦等研究了放电法生长 TiN 纤维。Bojarski 等研究了在钨丝基体上用化学气相沉积法生长 TiN 晶须的方法,讨论了晶须生长形态和晶须结构等问题。本文主要研究了在金属基板上化学气相沉积生长 TiN 晶须的工艺和晶须形状。
TiN material has high melting point (2949 ℃), high hardness, high temperature chemical stability and good thermal conductivity, electrical conductivity, has been widely used in high temperature, wear-resistant areas. In addition to the above features, TiN whiskers have great potential in whisker reinforced composites due to their close structurally perfect single crystal and high tensile strength. In recent years, Japan, Poland, the United States and other countries scientists have carried out the development of TiN whiskers, but the country is still blank. Takahashi Takehiko studied the growth of TiN fibers by discharge method. Bojarski et al. Studied the method of growing TiN whiskers by chemical vapor deposition on a tungsten matrix, and discussed the growth morphology and whisker structure of the whiskers. This paper mainly studies the process of growing TiN whiskers by chemical vapor deposition on metal substrates and the shape of whiskers.