论文部分内容阅读
提出了研究杂质层错复合体声子激发及其与位错运动相关的模型及理论计算方法；计算了声子激发态密度，发现存在杂质诱生的新的本征态，相应的能量分析表明：杂质附加于层错面上的能量依赖于温度及杂质—基体间的原子耦合强度，并影响位错攀移运动。
The phonon excitation and its related model and theoretical calculation method for dislocation movement are proposed. The density of phonon excited states is calculated and a new eigenstate induced by impurities is found. The corresponding energy analysis indicates : The energy of the impurity attached to the surface of the layer depends on the temperature and the impurity-matrix atomic coupling strength and affects the dislocation climbing movement.