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本文将双栅MESFET模拟成两个级联的单栅MESFET,用三端信号流通图来分析它的性能特征.并将双栅MESFET当作一个短的行波管来说明其工作原理的物理本质.可以看出,它是一种在微波领域中有着广泛用途的多功能器件.本文还讨论了GaAs双栅MESFET的设计.采用金属剥离工艺制作的双指状、深凹糟1微米栅的双栅MESFET,在4千兆赫下相关增益为20分贝,噪声系数为1.9分贝,在8千兆赫下相关增益为18分贝,噪声系数为2.8分贝.
In this paper, a dual-gate MESFET is modeled as two cascaded single-gate MESFETs, whose three-terminal signal flow diagram is used to analyze its performance characteristics and the dual-gate MESFET is used as a short traveling-wave tube to illustrate the physical nature of its operation It can be seen that it is a multi-functional device that has a wide range of uses in the microwave field.This article also discusses the design of GaAs dual-gate MESFETs, and the double-finger, deep recess 1 micron gate double The gate MESFET has a relative gain of 20 dB at 4 GHz, a noise figure of 1.9 dB, an associated gain of 18 dB at 8 GHz, and a noise figure of 2.8 dB.