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采用热压法制备Ge2Sb2Te5相变存储材料用靶材,研究了制备工艺对靶材微观结构与致密度的影响。结果表明:随保温时间的延长,靶材致密度升高。Ge2Sb2Te5靶材适宜的制备条件为570℃、10MPa、4h,在该条件下制备的靶材主相含量达到95%,致密度达到98%,可满足制备薄膜的要求。
The target of Ge2Sb2Te5 phase change memory material was prepared by hot pressing, and the influence of the preparation process on the microstructure and density of the target was studied. The results show that with the increase of holding time, the density of target increases. The suitable preparation conditions of Ge2Sb2Te5 target are 570 ℃, 10MPa, 4h. The main phase content of target prepared by this method reaches 95% and the density reaches 98%, which can meet the requirements of film preparation.