几乎跨越10~8数量级的掺杂数量范围和高精度均匀掺杂性能,是离子注入技术的主要优点。同时,离子注入剂量的片内均匀性和片间、批间重复性,也对器件性能租成品率有极大影响。这就向注入剂量监测技术提出了挑战,要求其剂量分辨率和剂量绝对精度达0.1％,并需要以2～3毫米的空间分辨率来检测离子注入的非均匀性。另外,还要求测量方便、快速、便宜和直观。离子住入剂量测量技术总结如表1所示。 离子注入机掺杂剂量均匀性等值绕图绘制技术,目前已成了制造厂家用以评估系统性能的必要手段,也是使用厂家用以监控注 Almost spanning the order of 10 to 8 doping levels and high-precision uniform doping performance, the main advantages of ion implantation technology. At the same time, the uniformity of on-chip ion implantation dose and between-chip and batch-to-batch repeatability also have a tremendous impact on device yield. This poses a challenge to injecting dose monitoring technology requiring dose resolution and dose accuracy of up to 0.1% and the need for spatial ionospheric inhomogeneity at 2 to 3 millimeters. In addition, the measurement also requires convenient, fast, cheap and intuitive. Ion in-dose dose measurement techniques are summarized in Table 1 below. Ion Implanter Dosage Uniform Equivalence around the map drawing technology, has now become a manufacturer of the necessary means to assess the performance of the system, but also the use of manufacturers to monitor the Note