Cu3N and AlxCu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ℃ substrate temperature by using a pure Cu and Al target,respectively. X-ray diffraction (XRD) measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted 111 preferred orientation. XRD shows that t he growth of Al-doped copper nitride films (AlxCu3N) was affected strongly by doping Al,the intensity of 111 peak decreases with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N f rom crystallization. AFM shows that the surface of AlxCu3N film is smoother than that of Cu3N film. Compared w ith the Cu3N films,the resistivities of the Al-doped copper nitride films (AlxCu3N) have been reduced,and the microhardness has been enhanced. Cu3N and AlxCu3N films were prepared with reactive magnetron sputtering method. The two films were deposited on glass substrates at 0.8 Pa N2 partial pressure and 100 ° C substrate temperature by using a pure Cu and Al target, respectively. X-ray diffraction (XRD) measurements show that the un-doped film was composed of Cu3N crystallites with anti-ReO3 structure and adopted 111 preferred orientation. XRD shows that t he growth of Al-doped copper nitride films (AlxCu3N) was affected strongly by doping Al, the intensity of 111 Compared with increasing the concentration of Al and the high concentration of Al could prevent the Cu3N f rom crystallization. AFM shows that the surface of AlxCu3N film is smoother than that of Cu3N film. Compared w ith the Cu3N films, the resistivities of the Al -doped copper nitride films (AlxCu3N) have been reduced, and the microhardness has been enhanced.